Technical parameters/rated current: | -50.0 mA |
|
Technical parameters/breakdown voltage: | 30.0 V |
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Technical parameters/drain source resistance: | 85.0 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 350 mW |
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Technical parameters/drain source voltage (Vds): | 30.0 V |
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Technical parameters/breakdown voltage of gate source: | 45.0 V |
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Technical parameters/Continuous drain current (Ids): | -135 mA |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 350 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-92 |
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Dimensions/Height: | 4.7 mm |
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Dimensions/Packaging: | TO-92 |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 功能相似 | TO-92 |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, TO-92, 3Pin
|
||
J175D26Z
|
TI | 功能相似 |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, TO-92, 3Pin
|
|||
J176D26Z
|
Fairchild | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN
|
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