Technical parameters/dissipated power: 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/height: 4.7 mm
External dimensions/packaging: TO-92
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
J174
|
VISHAY | 功能相似 | TO-92 |
P-channel silicon field-effect transistors
|
||
J174
|
InterFET | 功能相似 | TO-92-3 |
P-channel silicon field-effect transistors
|
||
J174
|
ON Semiconductor | 功能相似 | TO-226-3 |
P-channel silicon field-effect transistors
|
||
J174
|
Vishay Siliconix | 功能相似 | TO-92 |
P-channel silicon field-effect transistors
|
||
J174
|
Allegro MicroSystems | 功能相似 |
P-channel silicon field-effect transistors
|
|||
J174-E3
|
Vishay Semiconductor | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, P-Channel, Junction FET
|
||
J174-E3
|
Vishay Siliconix | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, P-Channel, Junction FET
|
||
J177,126
|
NXP | 功能相似 | TO-226-3 |
射频结栅场效应晶体管(RF JFET)晶体管 AMMORA FET-RFSS
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review