Technical parameters/rated current: -50.0 mA
Technical parameters/breakdown voltage: 30.0 V
Technical parameters/drain source resistance: 85.0 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/breakdown voltage of gate source: 45.0 V
Technical parameters/Continuous drain current (Ids): -135 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 功能相似 | TO-92 |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, TO-92, 3Pin
|
||
J175D26Z
|
TI | 功能相似 |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, TO-92, 3Pin
|
|||
J176D26Z
|
Fairchild | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN
|
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