Technical parameters/drain source resistance: 85 Ω
Technical parameters/dissipated power: 360 mW
Technical parameters/leakage source breakdown voltage: 15 V
Technical parameters/breakdown voltage of gate source: 30 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
J174
|
VISHAY | 功能相似 | TO-92 |
P-channel silicon field-effect transistors
|
||
J174
|
InterFET | 功能相似 | TO-92-3 |
P-channel silicon field-effect transistors
|
||
J174
|
ON Semiconductor | 功能相似 | TO-226-3 |
P-channel silicon field-effect transistors
|
||
J174
|
Vishay Siliconix | 功能相似 | TO-92 |
P-channel silicon field-effect transistors
|
||
J174
|
Allegro MicroSystems | 功能相似 |
P-channel silicon field-effect transistors
|
|||
J174-E3
|
Vishay Semiconductor | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, P-Channel, Junction FET
|
||
J174-E3
|
Vishay Siliconix | 功能相似 | TO-92 |
Small Signal Field-Effect Transistor, P-Channel, Junction FET
|
||
J177,126
|
NXP | 功能相似 | TO-226-3 |
射频结栅场效应晶体管(RF JFET)晶体管 AMMORA FET-RFSS
|
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