Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/maximum allowable collector current: 0.1A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3-3
External dimensions/packaging: SOT-23-3-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCW61DE6327
|
Infineon | 类似代替 | SOT-23-3 |
SOT-23 PNP 32V 0.1A
|
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|
|
Zetex | 功能相似 | SOT-23 |
ON Semiconductor BCW66G , NPN 晶体管, 1 A, Vce=45 V, HFE:160, 100 MHz, 3引脚 SOT-23封装
|
||
BCW66G
|
Fairchild | 功能相似 | SOT-23-3 |
ON Semiconductor BCW66G , NPN 晶体管, 1 A, Vce=45 V, HFE:160, 100 MHz, 3引脚 SOT-23封装
|
||
BCW66G
|
Multicomp | 功能相似 | SOT-23 |
ON Semiconductor BCW66G , NPN 晶体管, 1 A, Vce=45 V, HFE:160, 100 MHz, 3引脚 SOT-23封装
|
||
BCW66G
|
Infineon | 功能相似 | SOT-23 |
ON Semiconductor BCW66G , NPN 晶体管, 1 A, Vce=45 V, HFE:160, 100 MHz, 3引脚 SOT-23封装
|
||
BCW66GLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BCW66GLT1G 单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 800 mA, 160 hFE
|
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