Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 330 mW
Technical parameters/DC current gain (hFE): 400
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2016/06/20
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Zetex | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCW66G 单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
|
||
BCW66G
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BCW66G 单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
|
||
BCW66G
|
Multicomp | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCW66G 单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
|
||
BCW66G
|
Infineon | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCW66G 单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
|
||
BCW66GE6327
|
Infineon | 功能相似 | SOT-23-3 |
SOT-23 NPN 45V 0.8A
|
||
BCW66GLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BCW66GLT1G 单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 800 mA, 160 hFE
|
||
BCW66G_D87Z
|
Fairchild | 完全替代 | SOT-23-3 |
Trans GP BJT NPN 45V 1A 3Pin SOT-23 T/R
|
||
BCW66G_D87Z
|
ON Semiconductor | 完全替代 |
Trans GP BJT NPN 45V 1A 3Pin SOT-23 T/R
|
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