Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): 75V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): 45V
Other/Collector Continuous Output Current (IC): 800mA/0.8A
Other/Cut off Frequency fTTransmission Frequency (fT): 170MHz
Other/DC current gain hFEDC Current Gain (hFE): 160~400
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: 700mV/0.7V
Other/dissipated power PcPower Dissipation: 330mW/0.33W
Other/Specification PDF: __
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Zetex | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCW66G 单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
|
||
BCW66G
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BCW66G 单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
|
||
BCW66G
|
Multicomp | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCW66G 单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
|
||
BCW66G
|
Infineon | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCW66G 单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
|
||
BCW66GE6327
|
Infineon | 功能相似 | SOT-23-3 |
SOT-23 NPN 45V 0.8A
|
||
BCW66GLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BCW66GLT1G 单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 800 mA, 160 hFE
|
||
BCW66G_D87Z
|
Fairchild | 完全替代 | SOT-23-3 |
Trans GP BJT NPN 45V 1A 3Pin SOT-23 T/R
|
||
BCW66G_D87Z
|
ON Semiconductor | 完全替代 |
Trans GP BJT NPN 45V 1A 3Pin SOT-23 T/R
|
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