Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 800 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.8A
Technical parameters/dissipated power (Max): 330 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Zetex | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCW66G 单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
|
||
BCW66G
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BCW66G 单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
|
||
BCW66G
|
Multicomp | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCW66G 单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
|
||
BCW66G
|
Infineon | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCW66G 单晶体管 双极, NPN, 45 V, 100 MHz, 350 mW, 1 A, 160 hFE
|
||
BCW66GLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BCW66GLT1G 单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 800 mA, 160 hFE
|
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