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Model BCW66GLT1G
Description ON SEMICONDUCTOR BCW66GLT1G 单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 800 mA, 160 hFE
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.12  yuan 0.12yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7171) Minimum order quantity(1)
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Technical parameters/frequency:

100 MHz

 

Technical parameters/rated voltage (DC):

45.0 V

 

Technical parameters/rated current:

800 mA

 

Technical parameters/number of pins:

3

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

330 mW

 

Technical parameters/breakdown voltage (collector emitter):

45 V

 

Technical parameters/Maximum allowable collector current:

0.8A

 

Technical parameters/minimum current amplification factor (hFE):

160 @100mA, 1V

 

Technical parameters/rated power (Max):

300 mW

 

Technical parameters/DC current gain (hFE):

60

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

300 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, Power Management, Automotive, Power Management, Automotive, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

Customs information/ECCN code:

EAR99

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