Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 800 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.8A
Technical parameters/minimum current amplification factor (hFE): 160 @100mA, 1V
Technical parameters/rated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2218A
|
Motorola | 功能相似 | TO-39 |
MULTICOMP 2N2218A 单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE
|
||
|
|
Microsemi | 功能相似 | TO-39 |
MULTICOMP 2N2218A 单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE
|
||
2N2218A
|
Infineon | 功能相似 | TO-39 |
MULTICOMP 2N2218A 单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE
|
||
2N2218A
|
CDIL | 功能相似 |
MULTICOMP 2N2218A 单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE
|
|||
BC556ABU
|
ON Semiconductor | 功能相似 | TO-226-3 |
ON Semiconductor BC556ABU , PNP 晶体管, 100 mA, Vce=65 V, HFE:110, 10 MHz, 3引脚 TO-92封装
|
||
BCW66GLT1G
|
ON Semiconductor | 完全替代 | SOT-23-3 |
ON SEMICONDUCTOR BCW66GLT1G 单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 800 mA, 160 hFE
|
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