Technical parameters/frequency: 150 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 65 V
Technical parameters/minimum current amplification factor (hFE): 110 @2mA, 5V
Technical parameters/rated power (Max): 500 mW
Technical parameters/DC current gain (hFE): 110
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC556ATA
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON Semiconductor BC556ATA , PNP 晶体管, 100 mA, Vce=65 V, HFE:110, 10 MHz, 3引脚 TO-92封装
|
||
BC556_J35Z
|
Fairchild | 类似代替 | TO-226-3 |
Trans GP BJT PNP 65V 0.1A 3Pin TO-92 Bulk
|
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