Technical parameters/frequency: | 100 MHz |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 0.3 W |
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Technical parameters/breakdown voltage (collector emitter): | 45 V |
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Technical parameters/Maximum allowable collector current: | 0.8A |
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Technical parameters/minimum current amplification factor (hFE): | 160 @100mA, 1V |
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Technical parameters/rated power (Max): | 300 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC817-25T116
|
ROHM Semiconductor | 类似代替 | SOT-23-3 |
Trans GP BJT NPN 45V 0.5A 3Pin SOT-23 T/R
|
||
BCW66GLT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR BCW66GLT1G 单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 800 mA, 160 hFE
|
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