Technical parameters/frequency: 250 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 330 mW
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/maximum allowable collector current: 0.1A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCW61A
|
Infineon | 类似代替 | SOT-23-3-3 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistor
|
||
BCW61A
|
Zetex | 类似代替 | SOT-23 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistor
|
||
|
|
Kexin | 类似代替 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistor
|
|||
|
|
Philips | 类似代替 | SOT-23 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistor
|
||
BCW61D
|
NXP | 类似代替 | SOT-23 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistor
|
||
BCW61D
|
VISHAY | 类似代替 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistor
|
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