Chip AI consultant
Technical parameters/dissipated power: 360 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 360 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/height: 4.7 mm
External dimensions/packaging: TO-92
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
J111_D26Z
|
Fairchild | 功能相似 | TO-226-3 |
J111系列 35 V 20 mA 8 Ohm 通孔 N沟道 开关 - TO-92
|
||
J111_D75Z
|
Fairchild | 类似代替 | TO-226-3 |
JFET N-CH 35V 625mW TO92
|
||
J111_D75Z
|
ON Semiconductor | 类似代替 | TO-226-3 |
JFET N-CH 35V 625mW TO92
|
||
|
|
Calogic | 类似代替 | TO-92 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
|
|
Vishay Siliconix | 类似代替 | TO-92 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J112
|
ON Semiconductor | 类似代替 | TO-92-3 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J112
|
VISHAY | 类似代替 | TO-92 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J112
|
ETC1 | 类似代替 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
|||
J112
|
Vishay Semiconductor | 类似代替 | TO-92 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J113
|
Fairchild | 类似代替 | TO-226-3 |
J113系列 35 V 2 mA 通孔 N沟道 开关 - TO-92
|
||
J113
|
VISHAY | 类似代替 | TO-92 |
J113系列 35 V 2 mA 通孔 N沟道 开关 - TO-92
|
||
|
J113
|
ETC1 | 类似代替 |
J113系列 35 V 2 mA 通孔 N沟道 开关 - TO-92
|
|||
|
J113
|
Samsung | 类似代替 |
J113系列 35 V 2 mA 通孔 N沟道 开关 - TO-92
|
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