Technical parameters/rated voltage (DC): 35.0 V
Technical parameters/rated current: 50.0 mA
Technical parameters/drain source resistance: 30 Ω
Technical parameters/dissipated power: 625 mW
Technical parameters/drain source voltage (Vds): 35.0 V
Technical parameters/Continuous drain current (Ids): 20.0 mA
Technical parameters/breakdown voltage: 35 V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TI | 类似代替 | 3 |
FAIRCHILD SEMICONDUCTOR J111 晶体管, 射频FET, 35 V, 625 mW, TO-92
|
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J111
|
ON Semiconductor | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR J111 晶体管, 射频FET, 35 V, 625 mW, TO-92
|
||
J111
|
VISHAY | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR J111 晶体管, 射频FET, 35 V, 625 mW, TO-92
|
||
J111
|
Vishay Dale | 类似代替 |
FAIRCHILD SEMICONDUCTOR J111 晶体管, 射频FET, 35 V, 625 mW, TO-92
|
|||
J111
|
Calogic | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR J111 晶体管, 射频FET, 35 V, 625 mW, TO-92
|
||
|
J111
|
ETC1 | 类似代替 |
FAIRCHILD SEMICONDUCTOR J111 晶体管, 射频FET, 35 V, 625 mW, TO-92
|
|||
J111_D26Z
|
Fairchild | 功能相似 | TO-226-3 |
J111系列 35 V 20 mA 8 Ohm 通孔 N沟道 开关 - TO-92
|
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