Technical parameters/drain source resistance: | 30 Ω |
|
Technical parameters/breakdown voltage: | 35 V |
|
Technical parameters/rated power (Max): | 625 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Box (TB) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TI | 类似代替 | 3 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J111
|
ON Semiconductor | 类似代替 | TO-92-3 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J111
|
VISHAY | 类似代替 | TO-92 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J111
|
Vishay Dale | 类似代替 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
|||
J111
|
Calogic | 类似代替 | TO-92 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J111
|
ETC1 | 类似代替 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
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