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Technical parameters/dissipated power: 360 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 360 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/height: 4.7 mm
External dimensions/packaging: TO-92
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
J113
|
Fairchild | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR J113 晶体管, JFET, JFET, -35 V, 2 mA, -3 V, TO-92, JFET
|
||
J113
|
VISHAY | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR J113 晶体管, JFET, JFET, -35 V, 2 mA, -3 V, TO-92, JFET
|
||
J113
|
ETC1 | 功能相似 |
FAIRCHILD SEMICONDUCTOR J113 晶体管, JFET, JFET, -35 V, 2 mA, -3 V, TO-92, JFET
|
|||
|
J113
|
Samsung | 功能相似 |
FAIRCHILD SEMICONDUCTOR J113 晶体管, JFET, JFET, -35 V, 2 mA, -3 V, TO-92, JFET
|
|||
J113-E3
|
VISHAY | 功能相似 | TO-92 |
Transistor: unipolar, N-MOSFET; 35V; 0.002A; 0.36W; TO92
|
||
J113_D74Z
|
ON Semiconductor | 功能相似 | TO-92 |
Trans JFET N-CH 3Pin TO-92 Ammo
|
||
J113_D75Z
|
ON Semiconductor | 完全替代 | TO-226-3 |
J113 Series 35V 50mA Through Hole N-Channel Switch - TO-92-3
|
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