Technical parameters/dissipated power: 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
J113
|
Fairchild | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR J113 晶体管, JFET, JFET, -35 V, 2 mA, -3 V, TO-92, JFET
|
||
J113
|
VISHAY | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR J113 晶体管, JFET, JFET, -35 V, 2 mA, -3 V, TO-92, JFET
|
||
J113
|
ETC1 | 功能相似 |
FAIRCHILD SEMICONDUCTOR J113 晶体管, JFET, JFET, -35 V, 2 mA, -3 V, TO-92, JFET
|
|||
|
J113
|
Samsung | 功能相似 |
FAIRCHILD SEMICONDUCTOR J113 晶体管, JFET, JFET, -35 V, 2 mA, -3 V, TO-92, JFET
|
|||
J113,126
|
NXP | 功能相似 | TO-226-3 |
IC JFET N-CH 40V 2mA TO92-3
|
||
J113_D74Z
|
ON Semiconductor | 功能相似 | TO-92 |
JFET N-CH 35V 625mW TO92
|
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