Technical parameters/drain source resistance: 100 Ω
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/breakdown voltage of gate source: 40 V
Technical parameters/breakdown voltage: 40 V
Technical parameters/Input capacitance (Ciss): 6pF @10V(Vgs)
Technical parameters/rated power (Max): 400 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 400 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/width: 3.2 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Calogic | 功能相似 | TO-92 |
JFET Chopper Transistor (N-Channel- Depletion)
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Vishay Siliconix | 功能相似 | TO-92 |
JFET Chopper Transistor (N-Channel- Depletion)
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J112
|
ON Semiconductor | 功能相似 | TO-92-3 |
JFET Chopper Transistor (N-Channel- Depletion)
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J112
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VISHAY | 功能相似 | TO-92 |
JFET Chopper Transistor (N-Channel- Depletion)
|
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J112
|
ETC1 | 功能相似 |
JFET Chopper Transistor (N-Channel- Depletion)
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|||
J112
|
Vishay Semiconductor | 功能相似 | TO-92 |
JFET Chopper Transistor (N-Channel- Depletion)
|
||
J113,126
|
NXP | 类似代替 | TO-226-3 |
IC JFET N-CH 40V 2mA TO92-3
|
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