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Technical parameters/rated power: 0.36 W
Technical parameters/dissipated power: 360 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 360 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
J113
|
Fairchild | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR J113 晶体管, JFET, JFET, -35 V, 2 mA, -3 V, TO-92, JFET
|
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J113
|
VISHAY | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR J113 晶体管, JFET, JFET, -35 V, 2 mA, -3 V, TO-92, JFET
|
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J113
|
ETC1 | 功能相似 |
FAIRCHILD SEMICONDUCTOR J113 晶体管, JFET, JFET, -35 V, 2 mA, -3 V, TO-92, JFET
|
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J113
|
Samsung | 功能相似 |
FAIRCHILD SEMICONDUCTOR J113 晶体管, JFET, JFET, -35 V, 2 mA, -3 V, TO-92, JFET
|
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