Technical parameters/drain source resistance: 30 Ω
Technical parameters/breakdown voltage: 35 V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TI | 类似代替 | 3 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J111
|
ON Semiconductor | 类似代替 | TO-92-3 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J111
|
VISHAY | 类似代替 | TO-92 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J111
|
Vishay Dale | 类似代替 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
|||
J111
|
Calogic | 类似代替 | TO-92 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
||
J111
|
ETC1 | 类似代替 |
JFET斩波晶体管N通道 - 耗尽 JFET Chopper Transistors N−Channel - Depletion
|
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