Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 4.7A
Technical parameters/rise time: 3.2 ns
Technical parameters/Input capacitance (Ciss): 740pF @25V(Vds)
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AO4828
|
Alpha & Omega Semiconductor | 功能相似 | SOIC-8 |
N沟道,60V,4.5A,56mΩ@10V
|
||
AUIRF7341QTR
|
International Rectifier | 类似代替 | SOIC-8 |
双路场效应管, MOSFET, 双N沟道, 5.1 A, 55 V, 0.043 ohm, 10 V, 3 V
|
||
|
|
IFA | 类似代替 |
INFINEON IRF7341PBF 双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V
|
|||
IRF7341PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7341PBF 双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V
|
||
IRF7341TRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7341TRPBF 双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V
|
||
STS4DNF60L
|
ST Microelectronics | 功能相似 | SOIC-8 |
STMICROELECTRONICS STS4DNF60L 双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
|
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