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Specification parameters
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Technical parameters/rated voltage (DC):

60.0 V

Technical parameters/rated current:

4.00 A

Technical parameters/number of channels:

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.045 Ω

Technical parameters/polarity:

N-Channel, Dual N-Channel

Technical parameters/dissipated power:

2.5 W

Technical parameters/threshold voltage:

1.7 V

Technical parameters/drain source voltage (Vds):

60 V

Technical parameters/Leakage source breakdown voltage:

60 V

Technical parameters/breakdown voltage of gate source:

±15.0 V

Technical parameters/Continuous drain current (Ids):

4.00 A

Technical parameters/rise time:

28 ns

Technical parameters/Input capacitance (Ciss):

1030pF @25V(Vds)

Technical parameters/rated power (Max):

2 W

Technical parameters/descent time:

10 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

2000 mW

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOIC-8

Dimensions/Length:

5 mm

Dimensions/Width:

4 mm

Dimensions/Height:

1.25 mm

Dimensions/Packaging:

SOIC-8

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643