Technical parameters/rated voltage (DC): | 80.0 V |
|
Technical parameters/rated current: | 3.60 A |
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Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.073 Ω |
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Technical parameters/polarity: | N-Channel, Dual N-Channel |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/product series: | IRF7380 |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 80 V |
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Technical parameters/Leakage source breakdown voltage: | 80.0 V |
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Technical parameters/Continuous drain current (Ids): | 3.60 A |
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Technical parameters/rise time: | 10.0 ns |
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Technical parameters/Input capacitance (Ciss): | 660pF @25V(Vds) |
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Technical parameters/rated power (Max): | 2 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Rail, Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS3812
|
ON Semiconductor | 功能相似 | SOIC-8 |
80V N沟道双通道PowerTrench MOSFET的 80V N-Channel Dual PowerTrench MOSFET
|
||
FDS3812
|
Fairchild | 功能相似 | SOIC-8 |
80V N沟道双通道PowerTrench MOSFET的 80V N-Channel Dual PowerTrench MOSFET
|
||
IRF7380
|
Infineon | 功能相似 | SO-8 |
SOIC N-CH 80V 3.6A
|
||
STS4DNF60L
|
ST Microelectronics | 功能相似 | SOIC-8 |
STMICROELECTRONICS STS4DNF60L 双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
|
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