Technical parameters/polarity: | Dual N-Channel |
|
Technical parameters/product series: | IRF7380 |
|
Technical parameters/drain source voltage (Vds): | 80 V |
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Technical parameters/Leakage source breakdown voltage: | 80.0 V |
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Technical parameters/Continuous drain current (Ids): | 3.60 A |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SO-8 |
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Dimensions/Packaging: | SO-8 |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7380PBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON IRF7380PBF 双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 73 mohm, 10 V, 4 V
|
||
IRF7380PBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF7380PBF 双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 73 mohm, 10 V, 4 V
|
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