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Model FDS3812
Description Trans MOSFET N-CH 80V 3.4A 8Pin SOIC N T/R
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Brand: ON Semiconductor
Packaging SOIC-8
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1412) Minimum order quantity(1)
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Technical parameters/drain source voltage (Vds): 80 V

Technical parameters/rise time: 3 ns

Technical parameters/Input capacitance (Ciss): 634pF @40V(Vds)

Technical parameters/rated power (Max): 900 mW

Technical parameters/descent time: 4 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 175℃

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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SOIC N-CH 80V 3.6A
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IRF7380PBF IRF7380PBF Infineon 功能相似 SOIC-8
INFINEON IRF7380PBF 双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 73 mohm, 10 V, 4 V
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