Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 3.40 A
Technical parameters/drain source resistance: 74.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/input capacitance: 634 pF
Technical parameters/gate charge: 13.0 nC
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/leakage source breakdown voltage: 80.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.40 A
Technical parameters/rise time: 3 ns
Technical parameters/Input capacitance (Ciss): 634pF @40V(Vds)
Technical parameters/rated power (Max): 900 mW
Technical parameters/descent time: 4 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7380
|
Infineon | 功能相似 | SO-8 |
SOIC N-CH 80V 3.6A
|
||
IRF7380PBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON IRF7380PBF 双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 73 mohm, 10 V, 4 V
|
||
IRF7380PBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF7380PBF 双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 73 mohm, 10 V, 4 V
|
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