Technical parameters/rated power: | 1.28 W |
|
Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 2 W |
|
Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Continuous drain current (Ids): | 4.5A |
|
Technical parameters/rise time: | 2.3 ns |
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Technical parameters/Input capacitance (Ciss): | 540pF @30V(Vds) |
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Technical parameters/rated power (Max): | 2 W |
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Technical parameters/descent time: | 1.9 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7341
|
International Rectifier | 功能相似 | SOIC |
Trans MOSFET N-CH 55V 4.7A 8Pin SOIC
|
||
IRF7341
|
Infineon | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 55V 4.7A 8Pin SOIC
|
||
IRF7341
|
IRF | 功能相似 |
Trans MOSFET N-CH 55V 4.7A 8Pin SOIC
|
|||
|
|
IFA | 功能相似 |
INTERNATIONAL RECTIFIER IRF7341PBF 双路场效应管, N 通道, MOSFET, 55V, SOIC 新
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|||
IRF7341PBF
|
Infineon | 功能相似 | SOIC-8 |
INTERNATIONAL RECTIFIER IRF7341PBF 双路场效应管, N 通道, MOSFET, 55V, SOIC 新
|
||
IRF7341TRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
INTERNATIONAL RECTIFIER IRF7341TRPBF 场效应管, MOSFET, 双N沟道, 2W, 8-SOIC
|
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