Technical parameters/rated voltage (DC): | 55.0 V |
|
Technical parameters/rated current: | 4.70 A |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/product series: | IRF7341 |
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Technical parameters/drain source voltage (Vds): | 55.0 V |
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Technical parameters/Continuous drain current (Ids): | 4.70 A |
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Technical parameters/rise time: | 3.20 ns |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC |
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Dimensions/Packaging: | SOIC |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AO4828
|
Alpha & Omega Semiconductor | 功能相似 | SOIC-8 |
N沟道,60V,4.5A,56mΩ@10V
|
||
AUIRF7341QTR
|
International Rectifier | 类似代替 | SOIC-8 |
双路场效应管, MOSFET, 双N沟道, 5.1 A, 55 V, 0.043 ohm, 10 V, 3 V
|
||
|
|
IFA | 类似代替 |
INFINEON IRF7341PBF 双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V
|
|||
IRF7341PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7341PBF 双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V
|
||
IRF7341TRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7341TRPBF 双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V
|
||
STS4DNF60L
|
ST Microelectronics | 功能相似 | SOIC-8 |
STMICROELECTRONICS STS4DNF60L 双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
|
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