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Description INFINEON IRF7341PBF Dual Field Effect Transistor, MOSFET, Dual N-channel, 4.7 A, 55 V, 50 Mohm, 10 V, 1 V
Product QR code
Brand: Infineon
Packaging SOIC-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.53  yuan 1.53yuan
5+:
$ 2.0669
25+:
$ 1.9138
50+:
$ 1.8066
100+:
$ 1.7607
500+:
$ 1.7300
2500+:
$ 1.6918
5000+:
$ 1.6764
10000+:
$ 1.6535
Quantity
5+
25+
50+
100+
500+
Price
$2.0669
$1.9138
$1.8066
$1.7607
$1.7300
Price $ 2.0669 $ 1.9138 $ 1.8066 $ 1.7607 $ 1.7300
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(1115) Minimum order quantity(5)
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Technical parameters/rated power: 2 W

Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.05 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 2 W

Technical parameters/threshold voltage: 1 V

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/Continuous drain current (Ids): 4.7A

Technical parameters/rise time: 3.2 ns

Technical parameters/Input capacitance (Ciss): 740pF @25V(Vds)

Technical parameters/rated power (Max): 2 W

Technical parameters/descent time: 13 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.5 mm

External dimensions/packaging: SOIC-8

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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