Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 20000 @100mA, 5V
Technical parameters/rated power (Max): 330 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 功能相似 | TO-236 |
FAIRCHILD SEMICONDUCTOR BCV27 单晶体管 双极, 通用, NPN, 30 V, 220 MHz, 350 mW, 1.2 A, 20000 hFE
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BCV27
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Siemens Semiconductor | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BCV27 单晶体管 双极, 通用, NPN, 30 V, 220 MHz, 350 mW, 1.2 A, 20000 hFE
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Philips | 功能相似 | TO-236 |
FAIRCHILD SEMICONDUCTOR BCV27 单晶体管 双极, 通用, NPN, 30 V, 220 MHz, 350 mW, 1.2 A, 20000 hFE
|
||
BCV27
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Nexperia | 功能相似 | TO-236 |
FAIRCHILD SEMICONDUCTOR BCV27 单晶体管 双极, 通用, NPN, 30 V, 220 MHz, 350 mW, 1.2 A, 20000 hFE
|
||
|
|
Philips | 功能相似 | TO-236 |
NXP BCV27,215 单晶体管 双极, 达林顿, NPN, 30 V, 220 MHz, 250 mW, 500 mA, 4000 hFE
|
||
BCV27,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP BCV27,215 单晶体管 双极, 达林顿, NPN, 30 V, 220 MHz, 250 mW, 500 mA, 4000 hFE
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||
BCV27,215
|
NXP | 功能相似 | SOT-23-3 |
NXP BCV27,215 单晶体管 双极, 达林顿, NPN, 30 V, 220 MHz, 250 mW, 500 mA, 4000 hFE
|
||
BCV27E6327HTSA1
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Infineon | 功能相似 | SOT-23-3 |
达林顿晶体管 NPN Silicn Darlingtn TRANSISTOR
|
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