Technical parameters/rated power: 0.25 W
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 20000 @100mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/DC current gain (hFE): 4000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/gain bandwidth: 220 MHz
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCV27TA
|
Diodes | 功能相似 | SOT-23-3 |
TRANS DARL NPN 500mA 30V SOT23-3
|
||
MMBTA13LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBTA13LT1G 单晶体管 双极, NPN, 30 V, 125 MHz, 225 mW, 300 mA, 10000 hFE
|
||
PMBTA14,215
|
Nexperia | 类似代替 | SOT-23-3 |
PMBTA14 系列 30 V 500 mA 表面贴装 NPN 达林顿晶体管 - SOT-23-3
|
||
PMBTA14,215
|
NXP | 类似代替 | SOT-23-3 |
PMBTA14 系列 30 V 500 mA 表面贴装 NPN 达林顿晶体管 - SOT-23-3
|
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