Technical parameters/rated power: | 0.25 W |
|
Technical parameters/dissipated power: | 250 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 30 V |
|
Technical parameters/minimum current amplification factor (hFE): | 20000 @100mA, 5V |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/gain bandwidth: | 125MHz (Min) |
|
Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 类似代替 | TO-236 |
NXP BCV27,215 单晶体管 双极, 达林顿, NPN, 30 V, 220 MHz, 250 mW, 500 mA, 4000 hFE
|
||
BCV27,215
|
Nexperia | 类似代替 | SOT-23-3 |
NXP BCV27,215 单晶体管 双极, 达林顿, NPN, 30 V, 220 MHz, 250 mW, 500 mA, 4000 hFE
|
||
BCV27,215
|
NXP | 类似代替 | SOT-23-3 |
NXP BCV27,215 单晶体管 双极, 达林顿, NPN, 30 V, 220 MHz, 250 mW, 500 mA, 4000 hFE
|
||
PMBTA13,215
|
NXP | 类似代替 | SOT-23-3 |
NXP PMBTA13,215 单晶体管 双极, NPN, 30 V, 125 MHz, 250 mW, 500 mA, 10000 hFE
|
||
PMBTA14,215
|
Nexperia | 类似代替 | SOT-23-3 |
TRANS NPN DARL 30V 0.5A SOT23
|
||
PMBTA14,215
|
NXP | 类似代替 | SOT-23-3 |
TRANS NPN DARL 30V 0.5A SOT23
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review