Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): 40V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster EmiterVoltage (VCEO): 30V
Other/Collector Continuous Output Current (IC): 500mA/0.5A
Other/Cut off Frequency fTTransmission Frequency (fT): 170MHz
Other/DC current gain hFEDC Current Gain (hFE): 20000 @ 5V,0.1A
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: 1V
Other/dissipated power PcPower Dissipation: 360mW/0.36W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 功能相似 | TO-236 |
Nexperia BCV27,215 NPN 达林顿晶体管对, 500 mA, Vce=30 V, HFE=4000, 3引脚 SOT-23 (TO-236AB)封装
|
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BCV27,215
|
Nexperia | 功能相似 | SOT-23-3 |
Nexperia BCV27,215 NPN 达林顿晶体管对, 500 mA, Vce=30 V, HFE=4000, 3引脚 SOT-23 (TO-236AB)封装
|
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BCV27,215
|
NXP | 功能相似 | SOT-23-3 |
Nexperia BCV27,215 NPN 达林顿晶体管对, 500 mA, Vce=30 V, HFE=4000, 3引脚 SOT-23 (TO-236AB)封装
|
||
BCV27TA
|
Diodes | 功能相似 | SOT-23-3 |
TRANS DARL NPN 500mA 30V SOT23-3
|
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