Technical parameters/dissipated power: 250 mW
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847ALT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
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|
|
Siemens Semiconductor | 功能相似 | SOT-323 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847AW
|
Taiwan Semiconductor | 功能相似 | SOT-323 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847AW
|
ON Semiconductor | 功能相似 | SOT-323-3 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847CLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847CLT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
||
BC848B
|
Motorola | 完全替代 | CASE 318-07 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848B
|
ROHM Semiconductor | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
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BC848B
|
AUK Semiconductor | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
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BC848B
|
Nexperia | 完全替代 | TO-236 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848B
|
Siemens AG | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848B
|
VISHAY | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848B
|
CJ | 完全替代 | SOT-23-3 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
|
|
Siemens AG | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
VISHAY | 完全替代 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
|||
BC848C
|
CDIL | 完全替代 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
|||
|
|
SLKOR. | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
CJ | 完全替代 | SOT-23-3 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
GUANGDONG HOTTECH INDUSTRIAL | 完全替代 | SOT-23-3 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
Panjit | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
Taiwan Semiconductor | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
ON Semiconductor | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC849BMTF
|
ON Semiconductor | 功能相似 | SOT-23 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
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