Technical parameters/number of pins: 3
Technical parameters/dissipated power: 310 mW
Technical parameters/minimum current amplification factor (hFE): 420
Technical parameters/DC current gain (hFE): 110
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 380 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Power management, portable equipment, signal processing, consumer electronics, industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847ALT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
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BC847CLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847CLT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
||
|
|
Siemens AG | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
VISHAY | 类似代替 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
|||
BC848C
|
CDIL | 类似代替 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
|||
|
|
SLKOR. | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
CJ | 类似代替 | SOT-23-3 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
GUANGDONG HOTTECH INDUSTRIAL | 类似代替 | SOT-23-3 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
Panjit | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
Taiwan Semiconductor | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
ON Semiconductor | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
|
|
Leshan Radio | 功能相似 |
NPN 晶体管,ON Semiconductor 这些 ON Semiconductor 双极晶体管可放大模拟或数字信号。 它们还可切换直流或用作振荡器。 ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
|
|||
|
|
SHIKUES | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC849C
|
General Electric Company | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
|
|
Panjit | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC849C
|
Diotec Semiconductor | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC849C
|
NXP | 类似代替 | TO-236 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC849C
|
Infineon | 类似代替 | SOT-23-3-3 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC849CLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC849CLT1G 单晶体管 双极, NPN, 30 V, 100 MHz, 225 mW, 100 mA, 420 hFE
|
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