Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 420
Technical parameters/Maximum current amplification factor (hFE): 800
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Minimum Packaging: 3000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ITT Corporation | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A
|
Nexperia | 完全替代 | TO-236 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
|
|
Fairchild | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A
|
CDIL | 完全替代 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
|||
|
|
Vishay Semiconductor | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A
|
Taiwan Semiconductor | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A
|
GMR Semiconductor | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A
|
Panjit | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A
|
Philips | 完全替代 | TO-236 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A,215
|
Nexperia | 类似代替 | SOT-23-3 |
BC847 系列 45 V 100 mA 表面贴装 NPN 通用 晶体管 - SOT-23
|
||
BC847B,215
|
NXP | 类似代替 | SOT-23-3 |
Nexperia BC847B,215 , NPN 晶体管, 100 mA, Vce=45 V, HFE:200, 100 MHz, 3引脚 SOT-23 (TO-236AB)封装
|
||
BC847C,215
|
Nexperia | 完全替代 | SOT-23-3 |
NXP BC847C,215 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE
|
||
BC848B
|
Motorola | 完全替代 | CASE 318-07 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848B
|
ROHM Semiconductor | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848B
|
AUK Semiconductor | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848B
|
Nexperia | 完全替代 | TO-236 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848B
|
Siemens AG | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848B
|
VISHAY | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848B
|
CJ | 完全替代 | SOT-23-3 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
|
|
Siemens AG | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
VISHAY | 完全替代 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
|||
BC848C
|
CDIL | 完全替代 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
|||
|
|
SLKOR. | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
CJ | 完全替代 | SOT-23-3 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
GUANGDONG HOTTECH INDUSTRIAL | 完全替代 | SOT-23-3 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
Panjit | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
Taiwan Semiconductor | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC848C
|
ON Semiconductor | 完全替代 | SOT-23 |
Transistor: NPN; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC849CLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC849CLT1G 单晶体管 双极, NPN, 30 V, 100 MHz, 225 mW, 100 mA, 420 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review