Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): 30V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): 30V
Other/Collector Continuous Output Current (IC): 100mA/0.1A
Other/Cut off Frequency fTTransmission Frequency (fT): 300MHz
Other/DC current gain hFEDC Current Gain (hFE): 200~450
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: 200~600 mV
Other/dissipated power PcPower Dissipation: 310mW/0.31W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847ALT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
||
BC847CLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847CLT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review