Encapsulation parameters/Encapsulation: | SOT-23 |
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Dimensions/Packaging: | SOT-23 |
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Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): | 50V |
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Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): | 45V |
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Other/collector continuous output current ICCollector Current (IC): | 100mA/0.1A |
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Other/Cut off Frequency fTTransmission Frequency (fT): | 300MHz |
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Other/DC current gain hFEDC Current Gain (hFE): | 110~220 |
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Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: | 200~600 mV |
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Other/dissipated power PcPower Dissipation: | 310mW/0.31W |
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Other/Specification PDF: | __ |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847,215
|
Nexperia | 功能相似 | SOT-23-3 |
BC847 系列 45 V 100 mA 表面贴装 NPN 通用 晶体管 - SOT-23-3
|
||
BC847ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847ALT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
||
BC847CLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847CLT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
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