Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 110
Technical parameters/Maximum current amplification factor (hFE): 220
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Other/Product Lifecycle: Active
Other/Minimum Packaging: 3000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847BW
|
Taiwan Semiconductor | 功能相似 | SOT-323 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847BW
|
Diotec Semiconductor | 功能相似 | SOT-323 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847BW
|
NXP | 功能相似 | SOT-323 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847BW
|
Kexin | 功能相似 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
|||
|
|
Infineon | 功能相似 | SOT-323-3-1 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
|
|
Kexin | 功能相似 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
|||
BC847CW
|
NXP | 功能相似 | SC-70 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
|
|
Central Semiconductor | 功能相似 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
|||
|
|
Siemens AG | 功能相似 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
|||
BC847CW
|
Diotec Semiconductor | 功能相似 | SOT-323 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847CW
|
Vishay Semiconductor | 功能相似 | SOT-323 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847CW
|
ON Semiconductor | 功能相似 | SOT-323-3 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847CW
|
CJ | 功能相似 | SC-70-3 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
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