Technical parameters/minimum current amplification factor (hFE): 110
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/length: 2.1 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847BW
|
Taiwan Semiconductor | 功能相似 | SOT-323 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847BW
|
Diotec Semiconductor | 功能相似 | SOT-323 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847BW
|
NXP | 功能相似 | SOT-323 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847BW
|
Kexin | 功能相似 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
|||
|
|
Infineon | 功能相似 | SOT-323-3-1 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
|
|
Kexin | 功能相似 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
|||
BC847CW
|
NXP | 功能相似 | SC-70 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
|
|
Central Semiconductor | 功能相似 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
|||
|
|
Siemens AG | 功能相似 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
|||
BC847CW
|
Diotec Semiconductor | 功能相似 | SOT-323 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847CW
|
Vishay Semiconductor | 功能相似 | SOT-323 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847CW
|
ON Semiconductor | 功能相似 | SOT-323-3 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
||
BC847CW
|
CJ | 功能相似 | SC-70-3 |
Transistor: NPN; bipolar; 50V; 100mA; 200mW; SOT323
|
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