Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 52 W |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/Continuous drain current (Ids): | 35.0 A |
|
Technical parameters/rise time: | 15 ns |
|
Technical parameters/Input capacitance (Ciss): | 1530pF @20V(Vds) |
|
Technical parameters/descent time: | 12 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 3.8W (Ta), 52W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | PowerPAK-1212-8 |
|
Dimensions/Length: | 3.3 mm |
|
Dimensions/Width: | 3.3 mm |
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Dimensions/Height: | 1.04 mm |
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Dimensions/Packaging: | PowerPAK-1212-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Vishay Intertechnology | 功能相似 | SO-8 |
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MOSFET N-CH 30V 40A PPAK SO-8
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Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH 30V 40A PPAK SO-8
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SIR466DP-T1-GE3
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Vishay Siliconix | 功能相似 | SO-8 |
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