Technical parameters/drain source resistance: 41 mΩ
Technical parameters/dissipated power: 3.5 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 30 V
Encapsulation parameters/Encapsulation: PowerPAK ChipFET
External dimensions/packaging: PowerPAK ChipFET
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7788DP-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET N-CH 30V 50A PPAK SO-8
|
||
SI7788DP-T1-GE3
|
Vishay Intertechnology | 功能相似 | SO-8 |
MOSFET N-CH 30V 50A PPAK SO-8
|
||
SIR466DP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
MOSFET N-CH 30V 40A PPAK SO-8
|
||
SIR466DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH 30V 40A PPAK SO-8
|
||
SIR466DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET N-CH 30V 40A PPAK SO-8
|
||
SIS434DN-T1-GE3
|
Vishay Siliconix | 功能相似 | PowerPAK-1212-8 |
Single N-Channel 40V 0.0076Ω 52W SMT Power Mosfet - PowerPAK-1212-8
|
||
SIS434DN-T1-GE3
|
VISHAY | 功能相似 | PowerPAK-1212-8 |
Single N-Channel 40V 0.0076Ω 52W SMT Power Mosfet - PowerPAK-1212-8
|
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