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Description VISHAY SIR466DP-T1-GE3 Field effect transistor, MOSFET, N-channel, 30V, 40A, SOIC, whole coil
Product QR code
Packaging SOIC
Delivery time
Packaging method
Standard packaging quantity 1
3.42  yuan 3.42yuan
5+:
$ 4.6197
25+:
$ 4.2775
50+:
$ 4.0380
100+:
$ 3.9353
500+:
$ 3.8669
2500+:
$ 3.7813
5000+:
$ 3.7471
10000+:
$ 3.6958
Quantity
5+
25+
50+
100+
500+
Price
$4.6197
$4.2775
$4.0380
$3.9353
$3.8669
Price $ 4.6197 $ 4.2775 $ 4.0380 $ 3.9353 $ 3.8669
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(8402) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.0029 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 54 W

Technical parameters/threshold voltage: 1.2 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 40.0 A

Technical parameters/rise time: 19 ns

Technical parameters/Input capacitance (Ciss): 2730pF @15V(Vds)

Technical parameters/descent time: 15 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 5 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/length: 5.15 mm

External dimensions/width: 5.89 mm

External dimensions/height: 1.04 mm

External dimensions/packaging: SOIC

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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