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Model IRFH5304TRPBF

Description INFINEON IRFH5304TRPBF 场效应管, MOSFET, N沟道, 79A, 30V, 3.6W

Brand: Infineon

Packaging PQFN-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	3.6 W
Technical parameters/number of channels:	1
Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	4.5 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	3.6 W
Technical parameters/product series:	IRFH5304
Technical parameters/threshold voltage:	2.35 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	79.0 A
Technical parameters/rise time:	25 ns
Technical parameters/Input capacitance (Ciss):	2360pF @10V(Vds)
Technical parameters/rated power (Max):	3.6 W
Technical parameters/descent time:	6.6 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	3.6W (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	PQFN-8
Dimensions/Width:	5 mm
Dimensions/Packaging:	PQFN-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Isolated Secondary Side SyncRec MOSFETs, Isolated Primary Side MOSFETs, Point of Load ControlFET
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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