Technical parameters/number of pins: | 8 |
|
Technical parameters/drain source resistance: | 0.0024 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 5.4 W |
|
Technical parameters/threshold voltage: | 1 V |
|
Technical parameters/Input capacitance: | 5600pF @15V |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 30.0 A |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | PowerPAKSO-8 |
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Dimensions/Length: | 5.99 mm |
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Dimensions/Height: | 1.07 mm |
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Dimensions/Packaging: | PowerPAKSO-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFH5304TRPBF
|
Infineon | 功能相似 | PQFN-8 |
INFINEON IRFH5304TRPBF 场效应管, MOSFET, N沟道, 79A, 30V, 3.6W
|
||
SI7336ADP-T1-GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
VISHAY SI7336ADP-T1-GE3 场效应管, MOSFET, N沟道
|
||
SI7336ADP-T1-GE3
|
Vishay Semiconductor | 完全替代 | PowerPAK SO |
VISHAY SI7336ADP-T1-GE3 场效应管, MOSFET, N沟道
|
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