Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 5.4W (Ta) |
|
Technical parameters/drain source voltage (Vds): | 30.0 V |
|
Technical parameters/Continuous drain current (Ids): | 30.0 A |
|
Technical parameters/rise time: | 16.0 ns |
|
Technical parameters/Input capacitance (Ciss): | 5600pF @15V(Vds) |
|
Technical parameters/dissipated power (Max): | 5.4W (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SO-8 |
|
Dimensions/Packaging: | SO-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Not Recommended |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7336ADP-T1-E3
|
Vishay Semiconductor | 类似代替 | PowerPAKSO-8 |
MOSFET N-CH 30V 30A PPAK SO-8
|
||
SI7336ADP-T1-GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
VISHAY SI7336ADP-T1-GE3 场效应管, MOSFET, N沟道
|
||
SI7336ADP-T1-GE3
|
Vishay Semiconductor | 完全替代 | PowerPAK SO |
VISHAY SI7336ADP-T1-GE3 场效应管, MOSFET, N沟道
|
||
SIR464DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPAKSO-8 |
MOSFET N-CH 30V 50A PPAK SO-8
|
||
SIR464DP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
MOSFET N-CH 30V 50A PPAK SO-8
|
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