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Model SIR464DP-T1-GE3
Description VISHAY SIR464DP-T1-GE3 Field effect transistor, MOSFET, N-channel, 30V, 50A, POWERPAK8
Product QR code
Brand: Vishay Semiconductor
Packaging PowerPAKSO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.73  yuan 2.73yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7323) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.0026 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

5.2 W

 

Technical parameters/threshold voltage:

1.2 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

50.0 A

 

Technical parameters/Input capacitance (Ciss):

3545pF @15V(Vds)

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

5200 mW

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

PowerPAKSO-8

 

Dimensions/Length:

6.15 mm

 

Dimensions/Width:

5.15 mm

 

Dimensions/Height:

1.04 mm

 

Dimensions/Packaging:

PowerPAKSO-8

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Power Management, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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MOSFET N-CH 30V 30A PPAK SO-8
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SI7336ADP-T1-GE3 SI7336ADP-T1-GE3 Vishay Siliconix 功能相似 SO-8
MOSFET N-CH D-S 30V PPAK 8SOIC
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SI7336ADP-T1-GE3 SI7336ADP-T1-GE3 Vishay Semiconductor 功能相似 PowerPAK SO
MOSFET N-CH D-S 30V PPAK 8SOIC
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