Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0024 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 5.4 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 30.0 A
Technical parameters/rise time: 16 ns
Technical parameters/descent time: 32 ns
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAK SO
External dimensions/packaging: PowerPAK SO
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7336ADP-T1-E3
|
Vishay Semiconductor | 类似代替 | PowerPAKSO-8 |
MOSFET N-CH 30V 30A PPAK SO-8
|
||
SI7336ADP-T1-GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
VISHAY SI7336ADP-T1-GE3 场效应管, MOSFET, N沟道
|
||
SI7336ADP-T1-GE3
|
Vishay Semiconductor | 完全替代 | PowerPAK SO |
VISHAY SI7336ADP-T1-GE3 场效应管, MOSFET, N沟道
|
||
SIR464DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPAKSO-8 |
MOSFET N-CH 30V 50A PPAK SO-8
|
||
SIR464DP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
MOSFET N-CH 30V 50A PPAK SO-8
|
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