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Model SIR466DP-T1-GE3

Description N 通道 MOSFET，30V 至 50V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor

Brand: VISHAY

Packaging SO-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.0029 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	5 W
Technical parameters/threshold voltage:	1.2 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	40.0 A
Technical parameters/rise time:	19 ns
Technical parameters/Input capacitance (Ciss):	2730pF @15V(Vds)
Technical parameters/rated power (Max):	54 W
Technical parameters/descent time:	15 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	5 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SO-8
Dimensions/Length:	5.15 mm
Dimensions/Width:	5.89 mm
Dimensions/Height:	1.04 mm
Dimensions/Packaging:	SO-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Minimum Packaging:	2500
Other/Manufacturing Applications:	Industrial, power management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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